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AIGB40N65F5
  • AIGB40N65F5

AIGB40N65F5

Infineon's 650V TRENCHSTOP™ 5 AUTO tech boosts efficiency in electric and hybrid vehicles. Its IGBT technology minimizes losses, maximizing efficiency for applications like On-Board Chargers, PFC and DC/AC. This leads to extended range or smaller EV batteries and reduced fuel consumption in hybrids. TRENCHSTOP™ 5 AUTO offers a cost-efficient alternative to MOSFETs, while the SMD housing, like D²PAK, cuts system costs and enhances quality control.

Infineon Technologies AIGB40N65F5 Product Info

16 April 2026 0

Parameters

Eon

0.39 mJ

IC (@ 100°) max

46 A

Launch year

2019

Package

D2PAK (TO-263-3)

Planned to be available until at least

2033

Ptot max

250 W

QGate

90 nC

Reflow Solderable

Yes

Switching Frequency

15-120 kHz

td(off)

166 ns

td(on)

22 ns

Technology

IGBT TRENCHSTOP™ 5

tf

6 ns

tr

13 ns

Type

IGBT

VCE max

650 V

VCE

1.6 V

Voltage Class max

650 V

Features

  • TRENCHSTOP™ 5 tech with low VCEsat
  • 650V break-down V, 40A nominal current
  • Very fast switching (up to 150kHz)
  • Automotive qualified in accordance
  • Max junction temperature 175 °C
  • Highest efficiency low conduction losses
  • very low switching losses
  • Very low junction and case temperature
  • SMD D2PAK package for low assembly
  • Extremely robust

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