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5962F1120101VXA
  • 5962F1120101VXA

5962F1120101VXA

Active and preferred

Infineon’s 72Mb Quad Data Rate (QDR®)-II+, CYRS154x series, are high performance, synchronous pipelined SRAMs designed with Infineon’s RADSTOP™ technology. The 72Mb QDR®-II+ memories are available in x18/x36 and two-word/four-word data bus configurations, and provides low latency and random memory access capability for high speed cache applications.

Infineon Technologies 5962F1120101VXA Product Info

16 April 2026 0

Parameters

Architecture

QDR-II+

Bank Switching

N

Burst Length (Words)

2

Data Width

x 18

Density

72 MBit

Device weight

6152.8 mg

ECC

N

Family

QDR-II+

Frequency

250 MHz

Interfaces

Parallel

Lead Ball Finish

Sn/Pb

On-Die Termination

N

Operating Temperature range

-55 °C to 125 °C

Operating Voltage range

1.7 V to 1.9 V

Organization (X x Y)

4Mb x 18

Peak Reflow Temp

260 °C

Planned to be available until at least

2033

Qualification

Military

Read Latency (Cycles)

2

Features

  • 72Mb density, 4M x18 two-word burst mode
  • 250MHz > freq./ 36 Gbps throughput
  • Two independent unidirectional data port
  • Double Data Rate (DDR) port
  • Output impedance matching input
  • Memory core toeliminate multi-bit errors
  • 1.5 V to 1.8 V HSTL I/O signal standards
  • 1.7 V to 1.9 V operating V R
  • –55°C to +125°C military temp. grade
  • 165-ceramic CGA (CCGA)
  • SWaP optimized CCGA package
  • DLAM QML-V qualified SMD 5962-11201

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