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2EDL8123G
  • 2EDL8123G

2EDL8123G

Active and preferred

The EiceDRIVER™ 2EDL8123G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8123G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.

Infineon Technologies 2EDL8123G Product Info

16 April 2026 0

Parameters

Channels

2

Configuration

Half-Bridge

Input Vcc range

8 V to 20 V

Isolation Type

Functional levelshift JI (Junction Isolated)

Output Current (Source)

3 A

Output Current (Sink)

6 A

Qualification

Industrial

Turn Off Propagation Delay

45 ns

Turn On Propagation Delay

45 ns

VCC UVLO (On)

7 V

Voltage Class

120 V

Apps

Data center power solutions, Telecommunications infrastructure, Multicopters and drones

Features

  • No need for external boot strap diode
  • Fast MOSFET switching
  • Strong pull-down current reduces risk of
  • return-on from switching noise
  • Low dead-time losses
  • Inherent shoot-through protection
  • -8 V/+15 V common mode rejection

Description

  • High power density
  • High efficiency
  • Strong MOSFET Reliability
  • High efficiency
  • Strong MOSFET reliability
  • Robust operation

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