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2EDF8275F
  • 2EDF8275F

2EDF8275F

2EDF8275F is perfect for robust and stable operation for primary side control of high- and low-side MOSFETs in noisy high-power switching environments. The strong 4A/8A source/sink dual-channel gate drivers provide a fast turn on/off when driving high- and medium-voltage MOSFETs such as CoolMOS™ or OptiMOS™. Both output channels are individually isolated and can be flexibly deployed as floating gate drivers with very high 150V/ns CMTI.

Infineon Technologies 2EDF8275F Product Info

16 April 2026 0

Parameters

Channels

2

Configuration

High-side and low-side, High-side, Half-Bridge

Input Vcc range

3 V to 3.3 V

Input-side supply

20 V

Isolation Type

Galvanic isolation - Functional

Output Current (Source)

4 A

Output Current (Sink)

8 A

Product Name

2EDF8275F

Qualification

Industrial

Turn Off Propagation Delay

37 ns

Turn On Propagation Delay

37 ns

VBS UVLO (On)

8 V

VBS UVLO (Off)

7 V

VCC UVLO (On)

2.85 V

Voltage Class

650 V

Apps

Telecommunications infrastructure

Features

  • Fast power switching w/ accurate timing
  • Optimized low cost system BOM
  • Robust design against switching noise
  • Output-to-output channel isolation
  • Input-to-output channel isolation

Description

  • Power effic & high res PWM control
  • Protection and safe operation
  • Flex assign't of any driver channel
  • Floating gate drive; regulatory safety

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