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2ED2110S06M
  • 2ED2110S06M

2ED2110S06M

Active and preferred

650 V high speed, high current high-side and low-side gate driver with typical 2.5 A source and sink currents in DSO-16 package for driving power MOSFET s and IGBT s.Based on our SOI-technology , the 2ED2110S06M has excellent ruggedness and noise immunity against negative transient voltages on VS pin. With no parasitic thyristor structures present in the device, no parasitic latch up can occur over all temperature and voltage conditions.

Infineon Technologies 2ED2110S06M Product Info

16 April 2026 0

Parameters

Channels

2

Configuration

High-side and low-side

Input Vcc range

10 V to 20 V

Isolation Type

Functional levelshift SOI (Silicon On Insulator)

Output Current (Sink)

2.5 A

Output Current (Source)

2.5 A

Product Name

2ED2110S06M

Qualification

Industrial

Turn Off Propagation Delay

110 ns

Turn On Propagation Delay

110 ns

VBS UVLO (On)

8.9 V

VBS UVLO (Off)

8 V

VCC UVLO (On)

8.9 V

VCC UVLO (Off)

8 V

Voltage Class

650 V

Apps

Power tools, Cordless power tools and outdoor power equipment, Photovoltaic, Home and building automation, Motor control

Features

  • Op. voltages (VS node) < + 650 V
  • Neg. VS transient immunity of 100 V
  • Integr. ultra-fast bootstrap diode
  • 90 ns propagation delay
  • Floating channel for bootstrap op.
  • Independent UVLO for both channels
  • Logic op. up to –11 V on VS Pin
  • Neg. voltage tol. on inputs of –5 V
  • Maximum supply voltage of 25 V
  • 3.3, 5 & 15 V input logic compatib.
  • Separate logic and power ground

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