ADRF5162

RECOMMENDED FOR NEW DESIGNS

High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz

Analog Devices ADRF5162 Product Info

10 February 2026 5

Features

Frequency range: 0.4 GHz to 8 GHz
Low insertion loss: 0.6 dB typical to 4 GHz
High Isolation: 45 dB typical to 4 GHz
High input linearity
- 0.1 dB power compression (P0.1dB): 49 dBm
- Third order intercept (IP3): >76 dBm
High power handling at T_CASE = 85°C:
- Insertion loss path
  - Average: 45.5 dBm
  - Pulsed (>100 ns pulse width, 15% duty cycle): 48.5 dBm
  - Peak (≤100 ns peak duration, 5% duty cycle): 50 dBm
- Hot-switching at RFC: 43 dBm

0.1 dB RF settling time with P_IN ≤ 43 dBm: 1.2 μs
No low frequency spurious
Positive control interface: CMOS/LVTTL-compatible
24-lead, 4.0 mm × 4.0 mm LFCSP package

Part details & applications

The ADRF5162 is a reflective, single pole double-throw (SPDT) switch manufactured in the silicon process.

The ADRF5162 operates from 0.4 GHz to 8 GHz with typical insertion loss of 0.6 dB and typical isolation of 45 dB. The device has a radio frequency (RF) input power handling capability of 45.5 dBm average power and 50 dBm peak power for the insertion loss path.

The ADRF5162 draws a low current of 130 μA on the positive supply of +3.3 V and 500 μA on negative supply of −3.3 V. The device employs complementary metal-oxide semiconductor (CMOS)-/low-voltage transistor to transistor logic (LVTTL)-compatible controls. The ADRF5162 requires no additional driver circuitry, which makes it an ideal alternative to GaN and PIN diode-based switches.

The ADRF5162 comes in a 24-lead, 4.0 mm × 4.0 mm, RoHS-compliant, lead frame chip scale package (LFCSP) package and can operate from −40°C to +105°C.

APPLICATIONS

Military radios, radars, and electronic counter measures
Cellular infrastructure
Test and instrumentation
GaN and PIN diode replacement

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